生命周期:量产
概述
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SSO8 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SSO8 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
特性
- OptiMOSTM - power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
概述
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SSO8 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SSO8 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
特性
- OptiMOSTM - power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal Level
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS compliant)
- 100% Avalanche tested
封装参数
- 属性参数值
- Package封装主要参数PG-TDSON-8Marking丝印主要参数6N04L039
技术参数
- 属性参数值
- TOP(°C)工作温度主要参数175.0°CTOP min(°C)最低工作温度主要参数-55℃
- TOP max(°C)最高工作温度主要参数+175℃PD(mW)耗散功率主要参数42W
- FET TypeFET 类型主要参数NVdss漏极-源极电压主要参数40V
- Id漏极电流主要参数60AV(GS)th栅极-源极阈值电压主要参数1.6V
- Rds(on)@Vgs,Id漏极-源极导通电阻主要参数3.9mΩQg@Vgs栅极电荷主要参数15nC
- Technology技术主要参数OptiMOS™-6
合规参数
- 属性参数值
- AEC-QAEC-Q主要参数是RoHSRoHS指令主要参数是
- RoHS状态RoHS状态主要参数合规MSL湿敏等级/湿度敏感等级/湿气敏感性等级主要参数1(无限)
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Lifecycle Risk生命周期风险主要参数低
- Factory Packing Type工厂包装类型主要参数编带Factory Packing Quantity工厂包装数量主要参数5000
- Weight(g)重量/质量主要参数1克(g)