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描述:
60V, N-Ch, 0,79mΩ max, Automotive MOSFET, TOLT, OptiMOS™ 5
60V, N-Ch, 0,79mΩ max, Automotive MOSFET, TOLT, OptiMOS™ 5
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生命周期:量产
概述
The IAUTN06S5N008T is a 0,79 mΩ, topside-cooled 60 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.
特性
- OptiMOS™ power MOSFET for automotive applications
- N-channel – enhancement mode – normal level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
- Perfectly suited for HV-LV DCDC converter
- Also available in TOLL and TOLG package
应用
- HV-LV DCDC converter
- General automotive applications.
概述
The IAUTN06S5N008T is a 0,79 mΩ, topside-cooled 60 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.
特性
- OptiMOS™ power MOSFET for automotive applications
- N-channel – enhancement mode – normal level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
- Perfectly suited for HV-LV DCDC converter
- Also available in TOLL and TOLG package
应用
- HV-LV DCDC converter
- General automotive applications.
IAUTN06S5N008T 系列参数
属性 | 参数值 |
---|---|
Package | TOLT |
Qualification | Automotive |
V DS max | 60V |
R DS (on) @10V max | 0.79mΩ; |
I D @25°C max | 503A |
Q G typ @10V | 210nC |
Q G typ @10V max | 273nC |
Polarity | N |
TOP min(℃) | -55℃ |
TOP max(℃) | 175℃ |
V GS(th) min | 2.2V |
V GS(th) max | 3V |
V GS(th) | 2.6V |
Technology | OptiMOS™-5 |
RoHS | YES |
无卤素 | YES |
IAUTN06S5N008TATMA1 型号参数
属性 | 参数值 |
---|---|
Package | TOLT |
Completely lead free | no |
无卤 | yes |
RoHS compliant | yes |
Packing Size | 1800 |
Packing Type | TAPE & REEL |
Moisture Level | 1 |
Moisture Packing | NON DRY |