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概述
iA1188N Hall-effect sensor is a temperature stable, stress-resistant sensor. Superior high-temperature
performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This
method reduces the offset voltage normally caused by device over molding, temperature dependencies, and
thermal stress.
特性
- DMOS Hall IC Technology
- Reverse Bias Protection on Power Supply Pin
- Chopper Stabilized Amplifier Stage
- Optimized for BLDC Motor Applications
- Reliable and Low Shifting on High Temp Condition
- Good ESD Protection
- Customer Sensitivity/Temperature Selection Are Available
- DFN 1.6x1.6
概述
iA1188N Hall-effect sensor is a temperature stable, stress-resistant sensor. Superior high-temperature
performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This
method reduces the offset voltage normally caused by device over molding, temperature dependencies, and
thermal stress.
特性
- DMOS Hall IC Technology
- Reverse Bias Protection on Power Supply Pin
- Chopper Stabilized Amplifier Stage
- Optimized for BLDC Motor Applications
- Reliable and Low Shifting on High Temp Condition
- Good ESD Protection
- Customer Sensitivity/Temperature Selection Are Available
- DFN 1.6x1.6
iA1188N 型号参数
| 属性 | 参数值 |
|---|---|
| Package | DFN1.6x1.6 |
| Supply Voltage | 2.5V~26V |
| Supply Current (MAX) | 5mA |
| Operation Point | -25 ~ -5 Gauss |
| Release Point | 5 ~ 25 Gauss |
| Hysteresis (BOP-BRP) | 30 Gauss |
