The IAUZN04S7N013 is a high-current, low-R_DS(on) power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications such as power distribution, body control modules, and electric motors.