生命周期：量产
概述
The IDT F1178 dual channel device operates with a single 5 V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 3300 to 3800 MHz with High or Low Side Injection. IF frequencies from 20 to 550 MHz are supported. matching modifications. Nominally, the device offers +39 dBm Output IP3 with 290 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
- Dual path for MIMO systems
- 9.0 dB Gain; ultra linear
- +39 dBm IP3O
- Low NF ~ 9 dB
- Extended LO level range for MIMO (-6 dBm)
- 200 ohm output impedance
- Very high +11 dBm P1dBI
- Pin compatible with IDT's Zero-Distortion family
- 6x6 mm 36-pin package
- Individual path power down mode
- < 200 nsec settling from power down
- Minimizes synthesizer pulling in standby mode
应用
概述
The IDT F1178 dual channel device operates with a single 5 V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 3300 to 3800 MHz with High or Low Side Injection. IF frequencies from 20 to 550 MHz are supported. matching modifications. Nominally, the device offers +39 dBm Output IP3 with 290 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
- Dual path for MIMO systems
- 9.0 dB Gain; ultra linear
- +39 dBm IP3O
- Low NF ~ 9 dB
- Extended LO level range for MIMO (-6 dBm)
- 200 ohm output impedance
- Very high +11 dBm P1dBI
- Pin compatible with IDT's Zero-Distortion family
- 6x6 mm 36-pin package
- Individual path power down mode
- < 200 nsec settling from power down
- Minimizes synthesizer pulling in standby mode
应用
封装参数
- 属性参数值
- Package封装主要参数VFQFPNPin Count端子数量主要参数36
技术参数
- 属性参数值
- VDD Range(V)工作电压/供电电压范围主要参数4.75V~5.25V
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产
