生命周期：量产
概述
The IDT F1150 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-mode, Multi-carrier BaseStation Receiver for RF bands from 1700 - 2200 MHz with High Side Injection. IF frequencies from 50 to 450 MHz are supported. Nominally, the device offers +40 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +36 dBm Output IP3 and 235 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
- Dual Path for Diversity Systems
- 1700 to 2200 MHz freq range
- Ideal for Multi-Carrier Systems
- 8.5 dB Gain (200 MHz IF)
- Ultra linear +38 dBm IP3O (350 MHz IF)
- Ultra linear +40 dBm IP3O (200 MHz IF)
- Low NF < 10 dB
- 200 ohm output impedance
- Ultra high +13 dBm P1dBI
- Drop in replacement for existing radiocards
- 6x6 mm 36 pin package
- Power Down mode
- < 200 nsec settling from Power Down
- Minimizes Synth pulling in Standby Mode
- Low Current Mode : ICC = 235 mA
- Standard Mode: ICC = 335 mA
- Optimized for High Side Injection
应用
概述
The IDT F1150 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-mode, Multi-carrier BaseStation Receiver for RF bands from 1700 - 2200 MHz with High Side Injection. IF frequencies from 50 to 450 MHz are supported. Nominally, the device offers +40 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +36 dBm Output IP3 and 235 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
- Dual Path for Diversity Systems
- 1700 to 2200 MHz freq range
- Ideal for Multi-Carrier Systems
- 8.5 dB Gain (200 MHz IF)
- Ultra linear +38 dBm IP3O (350 MHz IF)
- Ultra linear +40 dBm IP3O (200 MHz IF)
- Low NF < 10 dB
- 200 ohm output impedance
- Ultra high +13 dBm P1dBI
- Drop in replacement for existing radiocards
- 6x6 mm 36 pin package
- Power Down mode
- < 200 nsec settling from Power Down
- Minimizes Synth pulling in Standby Mode
- Low Current Mode : ICC = 235 mA
- Standard Mode: ICC = 335 mA
- Optimized for High Side Injection
应用
封装参数
- 属性参数值
- Package封装主要参数VFQFPNMounting Type安装类型主要参数表面贴装型
- Pin Count端子数量主要参数36Length(mm)长主要参数6
- Width(mm)宽主要参数6Height(mm)高主要参数0.8
技术参数
- 属性参数值
- TOP(°C)工作温度主要参数-40℃~+100℃TOP min(°C)最低工作温度主要参数-40℃
- TOP max(°C)最高工作温度主要参数+100℃VDD Range(V)工作电压/供电电压范围主要参数4.75V~5.25V
- Icc(A)工作电流主要参数334mAFeatures特性主要参数降频变频器
- FreLO(HZ)range本地振荡频率范围主要参数1.7GHz~2.2GHzMixers混频器数主要参数2
- NF(dB)噪声系数主要参数10dBConversion Gain(dB)转换增益主要参数8.5dB
- RF Type射频类型主要参数通用
合规参数
- 属性参数值
- ReachReach状态主要参数受影响RoHS状态RoHS状态主要参数合规
- Pb-free无铅主要参数是MSL湿敏等级/湿度敏感等级/湿气敏感性等级主要参数1(无限)
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Factory Packing Type工厂包装类型主要参数卷带(TR)
- Factory Packing Quantity工厂包装数量主要参数4744HTSHTS编码主要参数8542.39.0001
- ECCNECCN码主要参数EAR99Lifecycle Risk生命周期风险主要参数低
- Weight(g)重量/质量主要参数1克(g)
