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描述:
40V, N-Ch, 0.52mΩ max, Automotive MOSFET, SSO8(5x6), OptiMOS™ 7
40V, N-Ch, 0.52mΩ max, Automotive MOSFET, SSO8(5x6), OptiMOS™ 7
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生命周期:量产
参考库存: 2747 PCS
参考价格: ¥20.75
概述
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.
All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market
特性
- OptiMOS™ 7 power MOSFET for automotive applications
- Very low Ron*A
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (turn on/off)
- N-channel – Enhancement mode – Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Low package resistance and inductance
- Excellent thermal performance
- Industry's lowest FOM (RDS (on) x Qg)
- High power efficiency
- Increased design ruggedness for easy design
- Optimized switching performance
- Small footprint & efficient cooling
- High quality product design for Automotive
- High quality FE&BE production for Automotive
应用
- Electric power steering
- Braking systems
- Power disconnect switches in zonal architectures
- Battery management
- E-fuse boxes
- DC/DC
- All Automotive BLDC drives in a wide variety and power class
概述
A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.
All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market
特性
- OptiMOS™ 7 power MOSFET for automotive applications
- Very low Ron*A
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (turn on/off)
- N-channel – Enhancement mode – Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Low package resistance and inductance
- Excellent thermal performance
- Industry's lowest FOM (RDS (on) x Qg)
- High power efficiency
- Increased design ruggedness for easy design
- Optimized switching performance
- Small footprint & efficient cooling
- High quality product design for Automotive
- High quality FE&BE production for Automotive
应用
- Electric power steering
- Braking systems
- Power disconnect switches in zonal architectures
- Battery management
- E-fuse boxes
- DC/DC
- All Automotive BLDC drives in a wide variety and power class
封装参数
- 属性参数值
- Package封装主要参数PG-TDSON-8
技术参数
- 属性参数值
- TOP(°C)工作温度主要参数-55℃~+175℃(Tj)TOP min(°C)最低工作温度主要参数-55℃
- TOP max(°C)最高工作温度主要参数+175℃PD(mW)耗散功率主要参数179W(Tc)
- FET TypeFET 类型主要参数N沟道Vdss漏极-源极电压主要参数40V
- Vgss栅极-源极电压主要参数±16VId漏极电流主要参数430A
- V(GS)th栅极-源极阈值电压主要参数1.8V@95uARds(on)@Vgs,Id漏极-源极导通电阻主要参数0.52mΩ@88A,10V
- Ciss@Vds输入电容主要参数9415pF@20VQg@Vgs栅极电荷主要参数141nC@10V
- Technology技术主要参数OptiMOS™-7
合规参数
- 属性参数值
- AEC-QAEC-Q主要参数AEC-Q101ReachReach状态主要参数未受影响
- RoHSRoHS指令主要参数是RoHS状态RoHS状态主要参数合规
- Pb-free无铅主要参数否MSL湿敏等级/湿度敏感等级/湿气敏感性等级主要参数1
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Lifecycle Risk生命周期风险主要参数低
- Factory Packing Type工厂包装类型主要参数TAPE & REEL