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描述：
MOSFET_)40V 60V) PG-TDSON-8
MOSFET_)40V 60V) PG-TDSON-8
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生命周期：量产
参考库存： 10 PCS
参考价格： ￥3.99
概述
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses
特性
- Extended automotive qualification (beyond AEC-Q101)
- Excellent thermal performance in compact form factor
- Low gate charge and Qrr for reduced switching losses
- 20 percent higher current capability (SSO8 vs. DPAK)
应用
- DCDC
- LED lighting
- Wireless charging
- ADAS
- CAV (24V) applications
概述
The new OptiMOS™ 5 technology for 60V MOSFETs in the industry standard Single SS08 (5x6mm2) small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses
特性
- Extended automotive qualification (beyond AEC-Q101)
- Excellent thermal performance in compact form factor
- Low gate charge and Qrr for reduced switching losses
- 20 percent higher current capability (SSO8 vs. DPAK)
应用
- DCDC
- LED lighting
- Wireless charging
- ADAS
- CAV (24V) applications
封装参数
- 属性参数值
- Package封装主要参数Single SSO8
技术参数
- 属性参数值
- TOP(°C)工作温度主要参数-55℃~+175℃(Tj)TOP min(°C)最低工作温度主要参数-55℃
- TOP max(°C)最高工作温度主要参数+175℃PD(mW)耗散功率主要参数52W(Tc)
- FET TypeFET 类型主要参数N沟道Vgss栅极-源极电压主要参数±16V
- Id漏极电流主要参数60AV(GS)th栅极-源极阈值电压主要参数2.2V@19uA
- Rds(on)@Vgs,Id漏极-源极导通电阻主要参数7.3mΩ@30A,10VCiss@Vds输入电容主要参数1655pF@30V
- Technology技术主要参数OptiMOS™-5
合规参数
- 属性参数值
- AEC-QAEC-Q主要参数AEC-Q101ReachReach状态主要参数未受影响
- Pb-free无铅主要参数是MSL湿敏等级/湿度敏感等级/湿气敏感性等级主要参数1(无限)
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Factory Packing Type工厂包装类型主要参数编带
- Factory Packing Quantity工厂包装数量主要参数5000Lifecycle Risk生命周期风险主要参数低
- Weight(g)重量/质量主要参数1克(g)
