生命周期：量产
概述
The IDT F1162 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-carrier BaseStation Receiver for LTE and TDD RF bands from 2300 - 2700 MHz with either Side Injection. IF frequencies from 50 to 500 MHz are supported. Nominally, the device offers +43 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +38 dBm Output IP3 and 230 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
-
Zero-DistortionTM technology for LTE/TDD bands
-
2300 to 2700 MHz freq range\Ideal for Multi-Carrier Systems
-
8.9 dB Gain
-
Ultra linear +43 dBm IP3O
-
Low NF < 10 dB
-
200 Ω output impedance
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Ultra high +13 dBm P1dBI
-
Pin Compatible w/existing solutions
-
6x6mm 36-pin package
-
Power Down mode
-
~ 150 nsec settling from Power Down
-
Constant LO Port Z in STBY mode
-
Low Current Mode : ICC = 230 mA
-
Standard Mode: ICC = 330 mA
-
Can use with Low Side or High Side Injection
概述
The IDT F1162 dual channel device is designed to operate with a single 5V supply. It is optimized for operation in a Multi-carrier BaseStation Receiver for LTE and TDD RF bands from 2300 - 2700 MHz with either Side Injection. IF frequencies from 50 to 500 MHz are supported. Nominally, the device offers +43 dBm Output IP3 with 335 mA of ICC. Alternately one can adjust 4 resistor values and a toggle pin to run the device in low current mode with +38 dBm Output IP3 and 230 mA of ICC.
A member of IDT’s Zero-Distortion™ family, this RF to IF mixer reduces distortion for improved SNR while simultaneously reducing power consumption.
特性
-
Zero-DistortionTM technology for LTE/TDD bands
-
2300 to 2700 MHz freq range\Ideal for Multi-Carrier Systems
-
8.9 dB Gain
-
Ultra linear +43 dBm IP3O
-
Low NF < 10 dB
-
200 Ω output impedance
-
Ultra high +13 dBm P1dBI
-
Pin Compatible w/existing solutions
-
6x6mm 36-pin package
-
Power Down mode
-
~ 150 nsec settling from Power Down
-
Constant LO Port Z in STBY mode
-
Low Current Mode : ICC = 230 mA
-
Standard Mode: ICC = 330 mA
-
Can use with Low Side or High Side Injection
封装参数
- 属性参数值
- Package封装主要参数VFQFPNMounting Type安装类型主要参数表面贴装型
- Pin Count端子数量主要参数36Length(mm)长主要参数6
- Width(mm)宽主要参数6Height(mm)高主要参数0.8
技术参数
- 属性参数值
- TOP(°C)工作温度主要参数-40℃~+100℃TOP min(°C)最低工作温度主要参数-40℃
- TOP max(°C)最高工作温度主要参数+100℃VDD Range(V)工作电压/供电电压范围主要参数4.75V~5.25V
- Icc(A)工作电流主要参数330mAFeatures特性主要参数降频变频器
- FreLO(HZ)range本地振荡频率范围主要参数2.3GHz~2.7GHzMixers混频器数主要参数2
- NF(dB)噪声系数主要参数9.9dBConversion Gain(dB)转换增益主要参数8.9dB
- RF Type射频类型主要参数通用
合规参数
- 属性参数值
- ReachReach状态主要参数受影响RoHS状态RoHS状态主要参数合规
- Pb-free无铅主要参数是MSL湿敏等级/湿度敏感等级/湿气敏感性等级主要参数1(无限)
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Factory Packing Type工厂包装类型主要参数卷带(TR)
- Factory Packing Quantity工厂包装数量主要参数4747HTSHTS编码主要参数8542.39.0001
- ECCNECCN码主要参数EAR99Lifecycle Risk生命周期风险主要参数低
- Weight(g)重量/质量主要参数1克(g)
