生命周期：量产
概述
Infineon introduces our next advancement in Automotive MOSFET technology, the Dual Gate MOSFET. This truly unique product offers the best of two MOSFET types in one product; the LINFET for slow switching, current limiting, wide SOA, linear mode operation and the ONFET for low on-resistance, low loss, steady-state operation. It’s built upon our proven, high quality, robust, automotive OptiMOS™ 5 80V technology and TOLL package.
特性
- Two MOSFET types in one package!
- Linear FET and low RDS(on) FET types
- LINFET to switch slow, limit current
- ONFET to limit steady-state losses
- LINFET has enhanced SOA
- Tight VGS(th) ranges, good to parallel
- Dedicated gate pins for each MOSFET
- Common MOSFET source and drain pins
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Best of two MOSFET types in one part
- Independent control of each MOSFET
- Minimize EMI by slow switching
- Limit in-rush current
- Clamp for over-voltage protection
- Minimize conduction losses with ONFET
- High linear mode current at high VDS
- Possible to replace 2 FETs, save cost
- Proven rugged OptiMOS™ 5 and TOLL
- Designed for Automotive robustness
- High quality production for Automotive
应用
-
In-rush current limitation for capacitor charging
-
In-rush current limitation for motor surge current
-
Slow switching to minimize voltage transients and EMI
-
Drain-source voltage clamping for dissipation of inductive energy
-
Drain-source voltage clamping for over-voltage protection
-
Battery Disconnect Switch 48V
-
Battery Management System (BMS) 48V
-
Power Distribution 48V
-
48V Electric Catalyst Heating (eCAT) and 48V PTC Auxiliary Heater
-
Light Electric Vehicle Main Inverter Motor Control
-
Light Electric Vehicle Battery Management
-
48V Systems
-
48V Active Suspension
-
Airbag System backup power supply
-
Battery Disconnect Switch 24V
-
Battery Management System (BMS) 24V
-
Power Distribution 24V
概述
Infineon introduces our next advancement in Automotive MOSFET technology, the Dual Gate MOSFET. This truly unique product offers the best of two MOSFET types in one product; the LINFET for slow switching, current limiting, wide SOA, linear mode operation and the ONFET for low on-resistance, low loss, steady-state operation. It’s built upon our proven, high quality, robust, automotive OptiMOS™ 5 80V technology and TOLL package.
特性
- Two MOSFET types in one package!
- Linear FET and low RDS(on) FET types
- LINFET to switch slow, limit current
- ONFET to limit steady-state losses
- LINFET has enhanced SOA
- Tight VGS(th) ranges, good to parallel
- Dedicated gate pins for each MOSFET
- Common MOSFET source and drain pins
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Best of two MOSFET types in one part
- Independent control of each MOSFET
- Minimize EMI by slow switching
- Limit in-rush current
- Clamp for over-voltage protection
- Minimize conduction losses with ONFET
- High linear mode current at high VDS
- Possible to replace 2 FETs, save cost
- Proven rugged OptiMOS™ 5 and TOLL
- Designed for Automotive robustness
- High quality production for Automotive
应用
-
In-rush current limitation for capacitor charging
-
In-rush current limitation for motor surge current
-
Slow switching to minimize voltage transients and EMI
-
Drain-source voltage clamping for dissipation of inductive energy
-
Drain-source voltage clamping for over-voltage protection
-
Battery Disconnect Switch 48V
-
Battery Management System (BMS) 48V
-
Power Distribution 48V
-
48V Electric Catalyst Heating (eCAT) and 48V PTC Auxiliary Heater
-
Light Electric Vehicle Main Inverter Motor Control
-
Light Electric Vehicle Battery Management
-
48V Systems
-
48V Active Suspension
-
Airbag System backup power supply
-
Battery Disconnect Switch 24V
-
Battery Management System (BMS) 24V
-
Power Distribution 24V
IAUTN08S5N012L 型号参数
| 属性 | 参数值 |
|---|---|
| Package | TOLL |
| Qualification | Automotive |
| V DS max | 80V |
| R DS (on) @10V max | 1.15mΩ; |
| I D @25°C max | 300A |
| Q G typ @10V | 178nC |
| Q G typ @10V max | 231nC |
| Polarity | N |
| TOP min(℃) | -55℃ |
| TOP max(℃) | 175℃ |
| V GS(th) min | 2.5V |
| V GS(th) max | 3.3V |
| V GS(th) | 2.9V |
| Technology | OptiMOS™-5 |
| RoHS | YES |
| 无卤素 | YES |
