描述：
X-Band-Gunn
X-Band-Gunn
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生命周期：量产
概述
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
特性
- CW Designs to 500 mW
- Pulsed Designs to 10 W
- Frequency Coverage Specified from 5.9-95 GHz
- Low Phase Noise
- High Reliability"
概述
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
特性
- CW Designs to 500 mW
- Pulsed Designs to 10 W
- Frequency Coverage Specified from 5.9-95 GHz
- Low Phase Noise
- High Reliability"
X-Band-Gunn 系列参数
| 属性 | 参数值 |
|---|---|
| Diode Type | Cathode Heatsink |
| Operating Freguency (GHz) | 8.2-12 |
| Typ Operating Voltage | 10 |
| Minimum Power | 50-500 |
