生命周期：量产
概述
Infineon's reliable and robust Automotive Power MOSFET: IAUMN04S7N005G is a high-performance, N-channel OptiMOS™ power MOSFET designed for demanding automotive applications. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. It has an operating temperature range of -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing, so it's ideal for general automotive applications.
特性
- Low RDS(on) in 8x8 mm2
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (on/off)
- Leadless Packages w/ Cu-Clip
- Thin wafer Cu-technology
- 300 mm in-house production
- Gullwing package w/ long leads
- High power density in 8x8
- Increased current capability
- Improved design ruggedness
- Good switching performance
- efficient cooling in 8x8m mm2
- Automotive quality package
- Automotive quality production
- High TCOB performance on IMS
应用
- Automotive BLDC drives
- Zonal architecture switches
- Battery disconnect
- Power distribution
概述
Infineon's reliable and robust Automotive Power MOSFET: IAUMN04S7N005G is a high-performance, N-channel OptiMOS™ power MOSFET designed for demanding automotive applications. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. It has an operating temperature range of -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing, so it's ideal for general automotive applications.
特性
- Low RDS(on) in 8x8 mm2
- High Avalanche capability
- High SOA ruggedness
- Fast switching times (on/off)
- Leadless Packages w/ Cu-Clip
- Thin wafer Cu-technology
- 300 mm in-house production
- Gullwing package w/ long leads
- High power density in 8x8
- Increased current capability
- Improved design ruggedness
- Good switching performance
- efficient cooling in 8x8m mm2
- Automotive quality package
- Automotive quality production
- High TCOB performance on IMS
应用
- Automotive BLDC drives
- Zonal architecture switches
- Battery disconnect
- Power distribution
封装参数
- 属性参数值
- Package封装主要参数PG-HSOG-4-1
技术参数
- 属性参数值
- TOP min(°C)最低工作温度主要参数-55℃TOP max(°C)最高工作温度主要参数+175℃
- FET TypeFET 类型主要参数NVdss漏极-源极电压主要参数40V
- Id漏极电流主要参数250AV(GS)th栅极-源极阈值电压主要参数2.6V
- Rds(on)@Vgs,Id漏极-源极导通电阻主要参数0.5mΩQg@Vgs栅极电荷主要参数142nC
合规参数
- 属性参数值
- AEC-QAEC-Q主要参数是RoHSRoHS指令主要参数是
交易参数
- 属性参数值
- Lifecycle生命周期主要参数量产Lifecycle Risk生命周期风险主要参数低
