Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 120mΩ

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

MOSFET – EliteSiC Power, Single N-Channel, D²PAK-7L,900 V, 20 mΩ , 112 A

1200 V, 16 mohm SiC FET

N沟道 漏源电压(Vdss)：1200V 连续漏极电流(Id)：68A 功率(Pd)：340W 导通电阻(RDS(on)@Vgs,Id)：53mΩ@18V,33.3A 碳化硅MOS，高频大功率应用，低损耗

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L

N-channel SiC（碳化硅）功率MOSFET

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L

Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 20mΩ

Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 40mΩ